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@@ -601,11 +601,11 @@ license.
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but is already high enough to change the local optical
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properties. Below the MD resonance $R \approx 100$~nm, the EHP is
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mostly localized in the front side of the NP as shown in
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- Fig.~\ref{plasma-grid}(c). The highest stationary asymmetry factor
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+ Fig.~\ref{plasma-grid}(c). The highest quasi-stationary asymmetry factor
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$G_{N_e} \approx 0.5$--$0.6$ is achieved in this case. At the MD
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resonance conditions, the EHP distribution has a toroidal shape and
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is much closer to the homogeneous distribution. In contrast, above
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- the MD resonant size for $R = 115$~nm, and the $G_{N_e} < 0$ due to
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+ the MD resonant size for $R = 115$~nm the $G_{N_e} < 0$ due to
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the fact that EHP is dominantly localized in the back side of the NP.
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Once again, due to presence of continous pumping the Stage~3 is
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@@ -635,13 +635,12 @@ license.
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For the higher excitation conditions, the optical properties of
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silicon change significantly according to the equations
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- (\ref{Index}). As a result, the non-resonant ED
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- contributes to the forward shifting of EHP density
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- maximum. Therefore, EHP is localized in the front part of the NP,
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- influencing the asymmetry factor $G_{N_e}$ in
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- Fig.~\ref{time-evolution}. Approximately at the pulse peak, the critical
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- electron density $N_{cr} = 5\cdot{10}^{21}$~cm$^{-3}$ for silicon,
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- which corresponds to the transition to quasi-metallic state
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+ (\ref{Index}). As a result, the we observe the forward shifting of
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+ EHP density maximum. Therefore, EHP is localized in the front part of
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+ the NP, influencing the asymmetry factor $G_{N_e}$ in
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+ Fig.~\ref{time-evolution}. Approximately at the pulse peak, the
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+ critical electron density $N_{cr} = 5\cdot{10}^{21}$~cm$^{-3}$ for
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+ silicon, which corresponds to the transition to quasi-metallic state
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$Re(\epsilon) \approx 0$ and to the electron plasma resonance, is
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overcome. Further irradiation leads to a decrease in the asymmetry
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parameter down to $G_{N_e} = 0$ for higher EHP densities, as one can
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