Konstantin Ladutenko 7 years ago
parent
commit
96b19ea080
1 changed files with 8 additions and 9 deletions
  1. 8 9
      main.tex

+ 8 - 9
main.tex

@@ -601,11 +601,11 @@ license.
  but is already high enough to change the local optical
  but is already high enough to change the local optical
  properties. Below the MD resonance $R \approx 100$~nm, the EHP is
  properties. Below the MD resonance $R \approx 100$~nm, the EHP is
  mostly localized in the front side of the NP as shown in
  mostly localized in the front side of the NP as shown in
- Fig.~\ref{plasma-grid}(c). The highest stationary asymmetry factor
+ Fig.~\ref{plasma-grid}(c). The highest quasi-stationary asymmetry factor
  $G_{N_e} \approx 0.5$--$0.6$ is achieved in this case. At the MD
  $G_{N_e} \approx 0.5$--$0.6$ is achieved in this case. At the MD
  resonance conditions, the EHP distribution has a toroidal shape and
  resonance conditions, the EHP distribution has a toroidal shape and
  is much closer to the homogeneous distribution. In contrast, above
  is much closer to the homogeneous distribution. In contrast, above
- the MD resonant size for $R = 115$~nm, and the $G_{N_e} < 0$ due to
+ the MD resonant size for $R = 115$~nm the $G_{N_e} < 0$ due to
  the fact that EHP is dominantly localized in the back side of the NP.
  the fact that EHP is dominantly localized in the back side of the NP.
 
 
  Once again, due to presence of continous pumping the Stage~3 is
  Once again, due to presence of continous pumping the Stage~3 is
@@ -635,13 +635,12 @@ license.
  
  
  For the higher excitation conditions, the optical properties of
  For the higher excitation conditions, the optical properties of
  silicon change significantly according to the equations
  silicon change significantly according to the equations
- (\ref{Index}). As a result, the non-resonant ED
- contributes to the forward shifting of EHP density
- maximum. Therefore, EHP is localized in the front part of the NP,
- influencing the asymmetry factor $G_{N_e}$ in
- Fig.~\ref{time-evolution}. Approximately at the pulse peak, the critical
- electron density $N_{cr} = 5\cdot{10}^{21}$~cm$^{-3}$ for silicon,
- which corresponds to the transition to quasi-metallic state
+ (\ref{Index}). As a result, the we observe the forward shifting of
+ EHP density maximum. Therefore, EHP is localized in the front part of
+ the NP, influencing the asymmetry factor $G_{N_e}$ in
+ Fig.~\ref{time-evolution}. Approximately at the pulse peak, the
+ critical electron density $N_{cr} = 5\cdot{10}^{21}$~cm$^{-3}$ for
+ silicon, which corresponds to the transition to quasi-metallic state
  $Re(\epsilon) \approx 0$ and to the electron plasma resonance, is
  $Re(\epsilon) \approx 0$ and to the electron plasma resonance, is
  overcome. Further irradiation leads to a decrease in the asymmetry
  overcome. Further irradiation leads to a decrease in the asymmetry
  parameter down to $G_{N_e} = 0$ for higher EHP densities, as one can
  parameter down to $G_{N_e} = 0$ for higher EHP densities, as one can