changes

main.tex

@@ -514,15 +514,16 @@ license.
  side of the NP as demonstrated in Fig.~\ref{mie-fdtd}(d). In fact,
  very similar EHP distributions can be obtained by applying Maxwell's
  equations coupled with the rate equation for relatively weak
- excitation with EHP concentration of $N_e \approx
- 10^{20}$~cm$^{-3}$. The optical properties do not change considerably
- due to the excitation according to (\ref{Index}). Therefore, the
- excitation processes follow the intensity distribution. However, such
- coincidence was achieved under quasi-stationary conditions, after the
- electric field made enough oscillations inside the Si NP, transient
- analysis reveal much more details.
-
- To achieve a qualitative description for evolution of the EHP
+ excitation with EHP concentration of $N_e \approx 10^{20}$~cm$^{-3}$,
+ see Fig.~\ref{mie-fdtd}(e,f). The optical properties do not change
+ considerably due to the excitation according to
+ (\ref{Index}). Therefore, the excitation processes follow the
+ intensity distribution. However, such coincidence was achieved under
+ quasi-stationary conditions, after the electric field made enough
+ oscillations inside the Si NP. Further on we present transient
+ analysis, which reveals much more details.
+
+ To achieve a quantative description for evolution of the EHP
  distribution during the \textit{fs} pulse, we introduced another
  asymmetry factor
  $G_{N_e} = (N_e^{front}-N_e^{back})/(N_e^{front}+N_e^{back})$
@@ -533,28 +534,13 @@ license.
  optical response of the excited Si NP. When $G_{N_e}$ significantly
  differs from $0$, this assumption, however, could not be
  justified. In what follows, we discuss the results of the numerical
- modeling of the temporal evolution of the asymmetry factor $G_{N_e}$
- in Fig.~\ref{time-evolution} revealing the EHP evolution stages during pulse
- duration shown in Fig.~\ref{plasma-grid}.
+ modeling (see Fig.~\ref{time-evolution}) of the temporal evolution of
+ EHP densities and the asymmetry factor $G_{N_e}$. It reveals the EHP
+ evolution stages during pulse duration. Typical change of the
+ permittivity corresponding to each stage is shown in
+ Fig.~\ref{plasma-grid}.
 
- % Fig. \ref{Mie} demonstrates the temporal evolution of the EHP
- % generated inside the silicon NP of $R \approx 105$~nm. Here,
- % irradiation by high-intensity, $I\approx $ from XXX to YYY (???),
- % ultrashort laser Gaussian pulse is considered. Snapshots of free
- % carrier density taken at different times correspond to different
- % total amount of the deposited energy (different laser intensities).
-
-%To better analyze the degree of inhomogeneity, we introduce the EHP
-% asymmetry parameter, $G$, which is defined as a relation between the
-% average electron density generated in the front side of the
-% NP and the average electron density in the back side, as
-% shown in Fig. \ref{plasma-grid}. During the femtosecond pulse interaction,
-% this parameter significantly varies.
-
-
-
-
- To describe all the stages of powerful enough light interaction with
+ To describe all the stages of light non-linear interaction with
  Si NP, we present the calculation results obtained by using Maxwell's
  equations coupled with electron kinetics equations for different
  radii for resonant and non-resonant conditions. In this case, the