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Update on Overleaf.

k.ladutenko 7 lat temu
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  1. 6 7
      main.tex

+ 6 - 7
main.tex

@@ -526,8 +526,7 @@ license.
 
  Firstly, we analyze Mie coefficients (Fig.~\ref{mie-fdtd}) and
  the intensity distribution inside the non-excited Si NP as
- a function of its size for a fixed laser wavelength $\lambda = 800$
- nm.  We introduce $G_I$ factor of asymmetry, corresponding to
+ a function of its size for a fixed laser wavelength $\lambda = 800$~nm.  We introduce $G_I$ factor of asymmetry, corresponding to
  difference between the volume integral of intensity in the front side
  of the NP to that in the back side normalized to their sum:
  $G_I = (I^{front}-I^{back})/(I^{front}+I^{back})$, where
@@ -540,7 +539,7 @@ license.
  sizes below the first magnetic dipole resonance, the intensity is
  enhanced in the front side as in Fig.~\ref{mie-fdtd}(c) and
  $G_I > 0$. The behavior changes near the size resonance value,
- corresponding to $R \approx 105$ nm. In contrast, for larger sizes,
+ corresponding to $R \approx 105$~nm. In contrast, for larger sizes,
  the intensity is enhanced in the back side of the NP as
  demonstrated in Fig.~\ref{mie-fdtd}(d). In fact, the similar EHP
  distributions can be obtained by applying Maxwell's equations coupled
@@ -626,12 +625,12 @@ license.
  Fig.~\ref{fig3}). The EHP density is still relatively not high to
  influence the EHP evolution and strong diffusion rates but already
  enough to change the optical properties locally. Below the magnetic
- dipole resonance $R \approx 100$ nm, the EHP is mostly localized in
+ dipole resonance $R \approx 100$~nm, the EHP is mostly localized in
  the front side of the NP as shown in Fig.~\ref{fig2}(c). The highest
  stationary asymmetry factor $G_{N_e} \approx 0.5--0.6$ is achieved in this case. At the magnetic dipole
  resonance conditions, the EHP distribution has a toroidal shape and
  is much closer to homogeneous distribution. In contrast, above the
- magnetic dipole resonant size for $R = 115$ nm, the $G_{N_e} < 0$ due
+ magnetic dipole resonant size for $R = 115$~nm, the $G_{N_e} < 0$ due
  to dominantly EHP localized in the back side of the NP.
 
  For the higher excitation conditions, the optical properties of
@@ -659,8 +658,8 @@ license.
  It is worth noting that it is possible to achieve a formation of
  deeply subwavelength EHP regions due to high field localization. The
  smallest EHP localization and the larger asymmetry factor are
- achieved below the magnetic dipole resonant conditions for $R < 100$
- nm. Thus, the EHP distribution in Fig.~\ref{fig2}(c) is optimal for
+ achieved below the magnetic dipole resonant conditions for $R < 100$~nm.
+ Thus, the EHP distribution in Fig.~\ref{fig2}(c) is optimal for
  symmetry breaking in Si NP, as it results in the larger asymmetry
  factor $G_{N_e}$ and higher electron densities $N_e$. We stress here
  that such regime could be still safe for NP due to the very small