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@@ -246,15 +246,15 @@ On the other hand, plasma explosion imaging technique has been used to
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observe electron-hole plasmas (EHP), produced by femtosecond lasers,
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inside nanoparticles~\cite{Hickstein2014}. Particularly, a strongly
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localized EHP in the front side~\footnote{The incident wave propagate
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- in positive direction of $z$ axis. Geometric center of the nanoparticle is
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- located at $z=0$, front side corresponds to nanoparticle volume with
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-$z>0$ and back side for $z<0$} of NaCl nanocrystals of $R = 100$ nm
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-was revealed. The forward ejection of ions in this case was attributed
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-to a nanolensing effect inside the nanoparticle and the intensity
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-enhancement as low as $10\%$ on the far side of the nanoparticle. Much
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-stronger enhancements can be achieved near electric and magnetic
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-dipole resonances excited in single semiconductor nanoparticles, such
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-as silicon (Si), germanium (Ge) etc.
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+ in positive direction of $z$ axis. For the nanoparticle with
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+ geometric center located at $z=0$ front side corresponds to the
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+ volume $z>0$ and back side for $z<0$} of NaCl nanocrystals of
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+$R = 100$ nm was revealed. The forward ejection of ions in this case
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+was attributed to a nanolensing effect inside the nanoparticle and the
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+intensity enhancement as low as $10\%$ on the far side of the
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+nanoparticle. Much stronger enhancements can be achieved near electric
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+and magnetic dipole resonances excited in single semiconductor
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+nanoparticles, such as silicon (Si), germanium (Ge) etc.
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In this Letter, we show that ultra-short laser-based EHP
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photo-excitation in a spherical semiconductor (e.g., silicon)
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