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@@ -299,8 +299,8 @@ the high melting temperature ($\approx 1690$~K), whereas its nonlinear
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optical properties were extensively studied during the last
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optical properties were extensively studied during the last
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decades~\cite{Van1987, Sokolowski2000, leuthold2010nonlinear}. High
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decades~\cite{Van1987, Sokolowski2000, leuthold2010nonlinear}. High
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silicon melting point typically preserves structures formed from this
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silicon melting point typically preserves structures formed from this
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-material up to the EHP densities on the order of the critical value
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+material up to the EHP densities on the order of the critical value~\cite{Korfiatis2007}
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-$N_{cr} \approx 5\cdot{10}^{21}$~cm$^{-3}$ \cite{Korfiatis2007}. At
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+$N_{cr} \approx 5\cdot{10}^{21}$~cm$^{-3}$. At
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the critical density and above, silicon acquires metallic properties
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the critical density and above, silicon acquires metallic properties
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($Re(\epsilon) < 0$) and contributes to the EHP reconfiguration during
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($Re(\epsilon) < 0$) and contributes to the EHP reconfiguration during
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ultrashort laser irradiation.
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ultrashort laser irradiation.
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@@ -466,7 +466,7 @@ GitHub~\cite{Scattnlay-web} under open source license.
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\begin{figure*}[p]
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\begin{figure*}[p]
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\centering
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\centering
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- \includegraphics[width=145mm]{time-evolution-I-no-NP.pdf}
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+ \includegraphics[width=140mm]{time-evolution-I-no-NP.pdf}
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\caption{\label{time-evolution} Temporal EHP (a, c, e) and asymmetry
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\caption{\label{time-evolution} Temporal EHP (a, c, e) and asymmetry
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factor $G_{N_e}$ (b, d, f) evolution for different Si nanoparticle
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factor $G_{N_e}$ (b, d, f) evolution for different Si nanoparticle
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radii of (a, b) $R = 75$~nm, (c, d) $R = 100$~nm, and (e, f)
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radii of (a, b) $R = 75$~nm, (c, d) $R = 100$~nm, and (e, f)
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@@ -483,7 +483,7 @@ GitHub~\cite{Scattnlay-web} under open source license.
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\begin{figure*}
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\begin{figure*}
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\centering
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\centering
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- \includegraphics[width=150mm]{plasma-grid.pdf}
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+ \includegraphics[width=145mm]{plasma-grid.pdf}
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\caption{\label{plasma-grid} EHP density snapshots inside Si
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\caption{\label{plasma-grid} EHP density snapshots inside Si
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nanoparticle of radii $R = 75$~nm (a-d), $R = 100$~nm (e-h) and
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nanoparticle of radii $R = 75$~nm (a-d), $R = 100$~nm (e-h) and
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$R = 115$~nm (i-l) taken at different times and conditions of
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$R = 115$~nm (i-l) taken at different times and conditions of
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@@ -620,7 +620,7 @@ GitHub~\cite{Scattnlay-web} under open source license.
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resonant size for $R = 115$~nm the $G_{N_e} < 0$ due to the fact that
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resonant size for $R = 115$~nm the $G_{N_e} < 0$ due to the fact that
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EHP is dominantly localized in the back side of the NP.
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EHP is dominantly localized in the back side of the NP.
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- In other words, due to a quasi-stationary pumping during Stage~3,
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+ Due to a quasi-stationary pumping during Stage~3,
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it is superposed with Stage~1 field pattern, resulting in an
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it is superposed with Stage~1 field pattern, resulting in an
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additional EHP localized in the front side. This can be seen when
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additional EHP localized in the front side. This can be seen when
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comparing result from the Mie theory in Fig.~\ref{mie-fdtd}(d) with
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comparing result from the Mie theory in Fig.~\ref{mie-fdtd}(d) with
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