Konstantin Ladutenko 7 years ago
parent
commit
933774ac45
1 changed files with 6 additions and 5 deletions
  1. 6 5
      main.tex

+ 6 - 5
main.tex

@@ -265,8 +265,8 @@ Maxwell equations with kinetic equations describing nonlinear EHP
 generation.  Three-dimensional transient variation of the material
 generation.  Three-dimensional transient variation of the material
 dielectric permittivity is calculated for nanoparticles of several
 dielectric permittivity is calculated for nanoparticles of several
 sizes. The obtained results propose a novel strategy to create
 sizes. The obtained results propose a novel strategy to create
-complicated non-symmetrical nanostructures by using photo-excited
-single spherical silicon nanoparticles. Moreover, we show that a dense
+complicated non-symmetrical nanostructures by using single photo-excited
+spherical silicon nanoparticles. Moreover, we show that a dense
 EHP can be generated at deeply subwavelength scale
 EHP can be generated at deeply subwavelength scale
 ($\approx$$\lambda$$^3$/100) supporting the formation of small
 ($\approx$$\lambda$$^3$/100) supporting the formation of small
 metalized parts inside the nanoparticle. In fact, such effects
 metalized parts inside the nanoparticle. In fact, such effects
@@ -432,7 +432,7 @@ length will be around 5--10~nm for N$_e$ close to N$_cr$.
 \centering
 \centering
 \includegraphics[width=0.495\textwidth]{mie-fdtd-3}
 \includegraphics[width=0.495\textwidth]{mie-fdtd-3}
 \caption{\label{mie-fdtd} (a, b) First four Lorentz-Mie coefficients
 \caption{\label{mie-fdtd} (a, b) First four Lorentz-Mie coefficients
-  ($a_1$, $a_2$, $b_1$, $b_2$) and the factor of asymmetry $G$
+  ($a_1$, $a_2$, $b_1$, $b_2$) and factors of asymmetry $G_I$, $G_{I^2}$ 
   according to Mie theory at fixed wavelength 800~nm. (c, d) Intensity
   according to Mie theory at fixed wavelength 800~nm. (c, d) Intensity
   distribution calculated by Mie theory and (e, f) EHP distribution
   distribution calculated by Mie theory and (e, f) EHP distribution
   for low free carrier densities $N_e \approx 10^{20}$ cm$^{-3}$ by
   for low free carrier densities $N_e \approx 10^{20}$ cm$^{-3}$ by
@@ -526,7 +526,8 @@ license.
 
 
 %\subsection{Effect of the irradiation intensity on EHP generation}
 %\subsection{Effect of the irradiation intensity on EHP generation}
 
 
- Firstly, we analyze the intensity distribution inside the non-excited
+ Firstly, we analyze Mie coefficients (Fig.~\ref{mie-fdtd}(b) ) and
+ the intensity distribution inside the non-excited
  Si nanoparticle as a function of its size for a fixed laser
  Si nanoparticle as a function of its size for a fixed laser
  wavelength $\lambda = 800$ nm.  \red{We introduce $G^I$ factor of
  wavelength $\lambda = 800$ nm.  \red{We introduce $G^I$ factor of
    asymmetry, corresponding to difference between the integral of
    asymmetry, corresponding to difference between the integral of
@@ -535,7 +536,7 @@ license.
    $G_I = (I^{front}-I^{back})/(I^{front}+I^{back})$, where
    $G_I = (I^{front}-I^{back})/(I^{front}+I^{back})$, where
    $I^{front}=\int_{0}^{+R} |E(z)|^2dz$ and
    $I^{front}=\int_{0}^{+R} |E(z)|^2dz$ and
    $I^{back}=\int_{-R}^{0} |E(z)|^2dz$. (Is it correct???Or
    $I^{back}=\int_{-R}^{0} |E(z)|^2dz$. (Is it correct???Or
-   integration over some angles are needed)} Fig. \ref{mie-fdtd}(b)
+   integration over some angles are needed)} Fig.~\ref{mie-fdtd}(b)
  shows the $G$ factor as a function of the nanoparticle size. For the
  shows the $G$ factor as a function of the nanoparticle size. For the
  nanoparticles of sizes below the first magnetic dipole resonance, the
  nanoparticles of sizes below the first magnetic dipole resonance, the
  intensity is enhanced in the front side as in Fig. \ref{mie-fdtd}(c)
  intensity is enhanced in the front side as in Fig. \ref{mie-fdtd}(c)